Staff/Principal GaN Process Development Engineer 1

In this senior technical role, you will lead GaN / Wide Band Gap device and process development and drive technology toward manufacturing readiness. You collaborate with international, interdisciplinary teams to shape device architectures, process concepts, and integration roadmaps. You will perform TCAD, DoE, and electrical characterization to solve complex development challenges and mentor others. This position offers visibility across the global PD organization and a strong impact on product readiness and customer partnerships.

Verantwortungsbereiche

• Lead development of GaN / Wide Band Gap devices and processes
• Define device architectures, process flows and technology concepts
• Guide TCAD simulation, DoE and electrical characterization
• Drive process integration from development toward manufacturing readiness
• Identify technical risks and define solutions for complex development challenges
• Provide technical expertise and support to customers and external partners
• Lead complex development projects across interdisciplinary and international teams
• Mentor engineers and contribute to GaN / Wide Band Gap technology roadmap

Zentrale Anforderungen

• PhD in electrical engineering, microelectronics or related field
• Minimum 5 years of experience in development, functionality, manufacturing, characterization and application of GaN / Wide Band Gap devices
• Strong expertise in wafer processing, process integration and electrical characterization
• Experience in development environment for the automotive industry
• Strong project management skills
• Strong communication skills in an international environment
• Teamwork in a multicultural work environment
• team player
• clear communicator
• mentoring mindset
• GaN / Wide Band Gap semiconductor devices
• wafer processing
• process integration